february 2002 ? 2002 fairchild semiconductor corporation fds6676s rev d (w) fds6676s 30v n - channel powertrench ? ? ? ? syncfet ? general description the fds6676s is designed to replace a single so-8 mosfet and schottky diode in synchronous dc:dc power supplies. this 30v mosfet is designed to maximize power conversion efficiency, providing a low r ds(on) and low gate charge. the fds6676s includes an integrated schottky diode using fairchild?s monolithic syncfet technology. applications ? dc/dc converter ? motor drives features ? 14.5 a, 30 v. r ds(on) = 7.5 m ? @ v gs = 10 v r ds(on) = 9.0 m ? @ v gs = 4.5 v ? includes syncfet schottky body diode ? low gate charge (43nc typical) ? high performance trench technology for extremely low r ds(on) and fast switching ? high power and current handling capability s d s s so-8 d d d g 4 3 2 1 5 6 7 8 absolute maximum ratings t a =25 o c unless otherwise noted symbol parameter ratings units v dss drain-source voltage 30 v v gss gate-source voltage 16 v i d drain current ? continuous (note 1a) 14.5 a ? pulsed 50 power dissipation for single operation (note 1a) 2.5 (note 1b) 1.2 p d (note 1c) 1 w t j , t stg operating and storage junction temperature range ?55 to +150 c thermal characteristics r ja thermal resistance, junction-to-ambient (note 1a) 50 c/w r jc thermal resistance, junction-to-case (note 1) 25 package marking and ordering information device marking device reel size tape width quantity fds6676s fds6676s 13?? 12mm 2500 units fds6676s
fds6676s rev d (w) electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain?source breakdown voltage v gs = 0 v, i d = 1 ma 30 v ? bv dss ? t j breakdown voltage temperature coefficient i d = 1 ma, referenced to 25 c 21 mv/ c i dss zero gate voltage drain current v ds = 24 v, v gs = 0 v 500 a i gssf gate?body leakage, forward v gs = 16 v, v ds = 0 v 100 na i gssr gate?body leakage, reverse v gs = ?16 v, v ds = 0 v ?100 na on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = 1 ma 1 1.4 2 v ? v gs(th) ? t j gate threshold voltage temperature coefficient i d = 1 ma, referenced to 25 c ?3.8 mv/ c r ds(on) static drain?source on?resistance v gs = 10 v, i d = 14.5 a v gs = 4.5 v, i d = 13.2 a v gs =10 v, i d =14.5a, t j =125 c 5.5 6.0 8.0 7.5 9.0 12 m ? i d(on) on?state drain current v gs = 10 v, v ds = 5 v 50 a g fs forward transconductance v ds = 10 v, i d = 14.5 a 80 s dynamic characteristics c iss input capacitance 4665 pf c oss output capacitance 826 pf c rss reverse transfer capacitance v ds = 15 v, v gs = 0 v, f = 1.0 mhz 304 pf r g gate resistance v gs = 15 mv, f = 1.0 mhz 1.4 ? switching characteristics (note 2) t d(on) turn?on delay time 11 20 ns t r turn?on rise time 10 20 ns t d(off) turn?off delay time 82 131 ns t f turn?off fall time v dd = 15 v, i d = 1 a, v gs = 10 v, r gen = 6 ? 30 48 ns q g total gate charge 43 60 nc q gs gate?source charge 10 nc q gd gate?drain charge v ds = 15 v, i d = 14.5 a, v gs = 5 v 11 nc drain?source diode characteristics and maximum ratings i s maximum continuous drain?source diode forward current 3.5 a v sd drain?source diode forward voltage v gs = 0 v, i s = 3.5 a (note 2) v gs = 0 v, i s = 7 a (note 2) 0.4 0.5 0.7 v t rr diode reverse recovery time 31 ns q rr diode reverse recovery charge i f = 14.5a, d if /d t = 300 a/s (note 3) 60 nc notes: 1. r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the so lder mounting surface of the drain pins. r jc is guaranteed by design while r ca is determined by the user's board design. a) 50/w when mounted on a 1 in 2 pad of 2 oz copper b) 105/w when mounted on a .04 in 2 pad of 2 oz copper c) 125/w when mounted on a minimum pad. see ?syncfet schottky body diode characteristics? below scale 1 : 1 on letter size paper pulse test: pulse width < 300 s, duty cycle < 2.0% fds6676s
fds6676s rev d (w) typical characteristics 0 10 20 30 40 50 00.511.5 v ds , drain-source voltage (v) i d , drain current (a) 2.5v 3.5v v gs = 10v 4.5v 3.0v 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 0 1020304050 i d , drain current (a) r ds(on) , normalized drain-source on-resistance v gs = 2.5v 4.5v 3.0v 3.5v 10v figure 1. on-region characteristics. figure 2. on-resistance variation with drain current and gate voltage. 0.6 0.8 1 1.2 1.4 1.6 -55 -35 -15 5 25 45 65 85 105 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistanc e i d = 14.5a v gs =10v 120 0.004 0.006 0.008 0.01 0.012 0.014 0.016 246810 v gs , gate to source voltage (v) r ds(on) , on-resistance (ohm) i d = 7.3 a t a = 125 o c t a = 25 o c figure 3. on-resistance variation with temperature. figure 4. on-resistance variation with gate-to-source voltage. 0 10 20 30 40 50 11.522.53 v gs , gate to source voltage (v) i d , drain current (a) t a = 125 o c 25 o c -55 o c v ds = 5v 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 v sd , body diode forward voltage (v) i s , reverse drain current (a) t a = 125 o c 25 o c -55 o c v gs = 0v figure 5. transfer characteristics. figure 6. body diode forward voltage variation with source current and temperature. fds6676s
fds6676s rev d (w) typical characteristics (continued) 0 2 4 6 8 10 0 20406080 q g , gate charge (nc) v gs , gate-source voltage (v) i d = 14.5a v ds = 10v 20v 15v 0 800 1600 2400 3200 4000 4800 5600 6400 0 5 10 15 20 25 30 v ds , drain to source voltage (v) capacitance (pf) c iss c rss c oss f = 1mhz v gs = 0 v figure 7. gate charge characteristics. figure 8. capacitance characteristics. 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds , drain-source voltage (v) i d , drain current (a) dc 1s 100ms r ds(on) limit v gs = 10v single pulse r ja = 125 o c/w t a = 25 o c 10ms 10s 100us 1ms 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) p(pk), peak transient power (w) single pulse r ja = 125c/w t a = 25c figure 9. maximum safe operating area. figure 10. single pulse maximum power dissipation. 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , time ( sec ) r(t), normalized effective transien t thermal resistance r jc (t) = r(t) * r jc r jc = 125 c/w t j - t c = p * r jc (t) duty cycle, d = t 1 / t 2 p(pk t 1 t 2 single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5 figure 11. transient thermal response curve. thermal characterization performed using the conditions described in note 1c. transient thermal response will change depending on the circuit board design. fds6676s
fds6676s rev d (w) typical characteristics (continued) syncfet schottky body diode characteristics fairchild?s syncfet process embeds a schottky diode in parallel with powertrench mosfet. this diode exhibits similar characteristics to a discrete external schottky diode in parallel with a mosfet. figure 12 shows the reverse recovery characteristic of the fds6676s. current : 0.8a/div time : 12.5ns/div figure 12. fds6676s syncfet body diode reverse recovery characteristic. for comparison purposes, figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size mosfet produced without syncfet (fds6676). current : 0.8a/div time : 12.5ns/div figure 13. non-syncfet (fds6676) body diode reverse recovery characteristic. schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. this will increase the power in the device. 0.00001 0.0001 0.001 0.01 0.1 0 5 10 15 20 25 30 v ds , reverse voltage (v) i dss , reverse le akage current (a ) t a = 125 o c t a = 25 o c t a = 100 o c figure 14. syncfet body diode reverse leakage versus drain-source voltage and temperature. fds6676s
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